High-Performance Low-Temperature Polycrystalline-Silicon Thin Film Transistors with Submicron-Dot-Array Doped Active Channel
نویسندگان
چکیده
A novel method named as submicron-dot-array (SDA) doping is developed for the fabrication of low-temperature polycrystallinesilicon thin film transistors (TFTs). All electrical parameters are improved by employing SDA structure. It is worth mentioning that the mobility of fabricated device is 4 times of conventional TFTs. The proposed SDA method has great potential for system-onpanel applications.
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تاریخ انتشار 2013